EMBEDDED CARBON-DOPED GERMANIUM AS STRESSOR FOR GERMANIUM nFET DEVICES

摘要

Carbon-doped germanium stressor regions are formed in an nFET device region of a germanium substrate and at a footprint of a functional gate structure. The carbon-doped germanium stressor regions are formed by an epitaxial growth process utilizing monomethylgermane (GeH3—CH3) as the carbon source. The carbon-doped germanium stressor regions that are provided yield more strain in less volume since a carbon atom is much smaller than a silicon atom.

主权项

1. A semiconductor structure comprising:
a functional gate structure located on a topmost surface of a germanium substrate and in an nFET device region of said germanium substrate; a source-side carbon-doped germanium stressor region located on one side of said functional gate structure; and a drain-side carbon-doped germanium stressor region located on another side of said functional gate structure.