SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR A SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

摘要

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

主权项

1. A solid-state imaging device comprising:
a first semiconductor substrate including a pixel array and a first multilayer wiring layer having a first connecting interconnect embedded in a first insulating layer, and a second semiconductor substrate including a logic circuit and a second multilayer wiring layer having a second connecting interconnect embedded in a second insulating layer, wherein the first semiconductor substrate and the second semiconductor substrate are configured such that the first multilayer wiring layer and the second multilayer wiring layer are opposed to one another and are electrically connected via the first connecting interconnect and the second connecting interconnect to one another, and wherein the first insulating layer and the second insulating layer are formed from one of SiN, SiCN, SiON SiC and an organic resin material.