| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method for suppressing generation of a rough state on a surface of an exposed part and a missing contact hole after development and resulting in excellent lithographic characteristics such as resolution and circularity.SOLUTION: The pattern forming method includes: (1) a step of forming a resist film on a substrate by using a radiation-sensitive composition; (2) exposing the resist film; and (3) developing the exposed resist film. A developer solution contains an organic solvent by 80 mass% or more; and the organic solvent comprises at least one compound selected from the group consisting of n-butyl acetate, isopropyl acetate, isoamyl acetate, and the like. The radiation-sensitive composition comprises [A] a polymer having a structural unit having an acid dissociable group, [B] a radiation-sensitive acid generator, and [C] a compound represented by formula (2), which generates an acid by exposure, the acid being relatively weaker than an acid generated by the [B] acid generator by exposure.SELECTED DRAWING: None |
