SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the semiconductor, the electron trap layer includes crystallized hafnium oxide. The crystallized hafnium oxide is deposited by a sputtering method using hafnium oxide as a target. When the substrate temperature is Tsub (° C.) and the proportion of oxygen in an atmosphere is P (%) in the sputtering method, P≧45−0.15×Tsub is satisfied. The crystallized hafnium oxide has excellent electron trapping properties. By the trap of an appropriate number of electrons, the threshold of the semiconductor device can be adjusted.

主权项

1. A semiconductor device comprising:
an electron trap layer between a first semiconductor and a gate electrode; and an electrode electrically connected to the first semiconductor, wherein the electron trap layer includes crystallized hafnium oxide, and wherein the electron trap layer is configured to trap electrons by setting a potential of the gate electrode higher than a potential of the electrode.