发明名称 |
OXIDE FILM, INTEGRATED CIRCUIT DEVICE, AND METHODS OF FORMING THE SAME |
摘要 |
A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate. |
申请公布号 |
US2016343799(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201514972903 |
申请日期 |
2015.12.17 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yi Ha-young;Lee Jun-won;Choi Byoung-deog;Lee Jong-myeong;Kim Mun-jun;Kim Hong-gun |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |