发明名称 Image Sensor with Buried Light Shield and Vertical Gate
摘要 A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region.
申请公布号 US2016343756(A1) 申请公布日期 2016.11.24
申请号 US201615161179 申请日期 2016.05.20
申请人 Apple Inc. 发明人 Fan Xiaofeng;Li Philip H.;Wan Chung Chun;Sharma Anup K.;Li Xiangli
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项
地址 Cupertino CA US