| 发明名称 |
NON-VOLATILE MEMORY WITH MULTIPLE LATENCY TIERS |
| 摘要 |
A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die. |
| 申请公布号 |
US2016343432(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201415113914 |
申请日期 |
2014.01.31 |
| 申请人 |
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
发明人 |
Henze Richard H.;Muralimanohar Naveen;Jeon Yoocharn;Foltin Martin;Ordentlich Erik;Lesartre Gregg B.;Williams R. Stanley |
| 分类号 |
G11C13/00;H01L27/24;H01L45/00;H01L23/528 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A non-volatile memory device with multiple latency tiers comprising:
at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point; wherein the at least two crossbar memory arrays each have a different latency; and wherein the at least two crossbar memory arrays are formed on a single die. |
| 地址 |
Houston TX US |
