发明名称 |
ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer. |
申请公布号 |
US2016343303(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615227738 |
申请日期 |
2016.08.03 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM Deok-Hoi |
分类号 |
G09G3/3233;H01L51/56;H01L27/32 |
主分类号 |
G09G3/3233 |
代理机构 |
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代理人 |
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主权项 |
1. An organic light emitting diode display, comprising:
a substrate including a pixel portion displaying an image and a peripheral portion surrounding the pixel portion; a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, the driving semiconductor layer being bent; a first gate insulating layer on the semiconductor layer; a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion; a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer; a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion; and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer. |
地址 |
Yongin-si KR |