发明名称 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
摘要 An organic light emitting diode display includes a pixel portion displaying an image and a peripheral portion surrounding the pixel portion, a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a being driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, a first gate insulating layer on the semiconductor layer, a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion, a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer, a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion, and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.
申请公布号 US2016343303(A1) 申请公布日期 2016.11.24
申请号 US201615227738 申请日期 2016.08.03
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM Deok-Hoi
分类号 G09G3/3233;H01L51/56;H01L27/32 主分类号 G09G3/3233
代理机构 代理人
主权项 1. An organic light emitting diode display, comprising: a substrate including a pixel portion displaying an image and a peripheral portion surrounding the pixel portion; a semiconductor layer including a pixel switching semiconductor layer on the pixel portion on the substrate, a driving semiconductor layer, and a peripheral switching semiconductor layer on the peripheral portion, the driving semiconductor layer being bent; a first gate insulating layer on the semiconductor layer; a peripheral switching gate electrode on the first gate insulating layer of the peripheral portion; a second gate insulating layer covering the peripheral switching gate electrode and the first gate insulating layer; a pixel switching gate electrode and a driving gate electrode on the second gate insulating layer of the pixel portion; and a third gate insulating layer covering the pixel switching gate electrode, the driving gate electrode, and the second gate insulating layer.
地址 Yongin-si KR