发明名称 CONTINUOUS PRODUCTION OF PHOTO-SENSITIVE GLASS BODIES
摘要 A method for continuous production of photo-sensitive glass bodies, glass bodies, and structured glass articles are provided. The glass bodies include a glass having Si4+, at least one crystal-agonist, at least one crystal-antagonist, and at least one pair of nucleating agents. The glass may be used in a method for structuring of glass. The glass bodies may be structured and/or unstructured and used in different applications such as in components or as components in micro-technology, in micro-reaction-technology, in electronic packaging, for micro-fluidic components, in or as FED spacer, for bio-technology (for example titer plates), as interposer, and in or as three-dimensional structurable antennae.
申请公布号 US2016340229(A1) 申请公布日期 2016.11.24
申请号 US201615158204 申请日期 2016.05.18
申请人 SCHOTT AG 发明人 Niessner Lothar;Feichtinger Martin;Renz Carsten;Schreder Bianca;Qian Sean;Xue Junming
分类号 C03C4/04;C03C3/095;C03B11/00;C03C15/00;C03C23/00 主分类号 C03C4/04
代理机构 代理人
主权项 1. A method of production of a photo-sensitive glass body, comprising the steps of: providing a mixture of raw materials for a glass; melting the mixture into a melt; transferring the melt into a mold; and pressing the melt in the mold to a glass body, wherein the melt at the time of transferring it into the mold has a temperature above 1000° C., wherein the melt cools down in the mold in such a way that a temperature range of 990° C. to 600° C. is passed through in a time span of less than 15 minutes, wherein the glass comprises Si4+, a crystal-agonist, a crystal-antagonist, and a pair of nucleating agents, wherein the crystal-agonist is selected from the group consisting of Na+, K+, Li+, and any combinations thereof, wherein the crystal-antagonist is selected from the group consisting of Al3+, B3+, Zn2+, Sn2+, Sb3+, and any combinations thereof, wherein the pair of nucleating agents comprises cerium and an agent selected from the group consisting of silver, gold, copper, any combinations thereof, and wherein the crystal-agonist has a molar proportion in cat.-% in relation to a molar proportion of Si4+ of at least 0.3 and at most 0.85.
地址 Mainz DE