| 摘要 |
A method for manufacturing circuit structures integrated in a semiconductor substrate (1) that includes regions (2), in particular isolation regions, the method comprising the steps of: depositing a conductive layer (3) to be patterned onto said semiconductor substrate (1); forming a first mask (4b) of a first material on said conductive layer (3); forming a second mask (5b) made of a second material that is different from the first and provided with first openings (10,12) of a first size (A) having spacers (8,8a) formed on their sidewalls to uncover portions of said first mask (4b) having a second width (B) which is smaller than the first; partly etching away said conductive layer (3) through said first and second masks (4b,5b) such to leave grooves (13) of said second width (B); removing said second mask (5a) and said spacers (8); and etching said grooves (13) through said first mask (4b) to uncover said regions (2) provided in said substrate (1) and form conductive lines (3a). <IMAGE> |
