| 摘要 |
The proposed piezoelectric device includes a substrate (1), an insulating layer (2), a lower electrode layer (3), a piezoelectric structure (4), and an upper electrode layer (5) thereon. The piezoelectric structure (4) comprises multiple piezoelectric layers (4-1, 4-3) sandwiching at least one conductive layer (4-2) which has the same crystal structure as the piezoelectric layers, in order to reduce the peak-to-valley (PV) roughness of the top surface. Preferably, PZT formed by reactive ion plating and SrRuO3 formed by sputtering are employed. The device is particularly suited for actuators of MEMS two-axis optical deflectors. |
