MAGNETORESISTANCE ELEMENT WITH AN IMPROVED SEED LAYER TO PROMOTE AN IMPROVED RESPONSE TO MAGNETIC FIELDS

摘要

A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.