发明名称 半導体レーザ装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser device LD1 comprises an edge-emitting semiconductor laser element 10A and a collimator lens 20. The semiconductor laser element 10A comprises a lower clad layer, an upper clad layer, an active layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer, and emits a plurality of laser beams LB each in a different direction from each of the positions corresponding to a plurality of regions on a light emission end surface LES . The collimator lens 20 has curvatures of a front surface 20a and a rear surface 20b so that an optical path length from each emission position to a front side principal plane on a light emission end surface LES becomes equal, and refracts each of the plurality of laser beams LB emitted from the semiconductor laser element 10A in a plane parallel to a thickness direction of the semiconductor laser element 10A.
申请公布号 JP6028509(B2) 申请公布日期 2016.11.16
申请号 JP20120228045 申请日期 2012.10.15
申请人 国立大学法人京都大学;浜松ホトニクス株式会社 发明人 黒坂 剛孝;渡邉 明佳;廣瀬 和義;杉山 貴浩;野田 進
分类号 H01S5/10;G02B1/02;G02B13/00;H01S5/40 主分类号 H01S5/10
代理机构 代理人
主权项
地址