| 摘要 |
The present disclosure concerns a self-referenced random access memory (MRAM) element (1), comprising a magnetic tunnel junction (2) having a magnetoresistance (MR), comprising: a storage layer (23) having a storage magnetization (231) that is pinned along a first direction (60) when the magnetic tunnel junction (2) is at a low temperature threshold; a sense layer (21) having a sense magnetization (211); and a tunnel barrier layer (22) included between the storage layer (23) and the sense layer (21); and an aligning device (20, 5, 52) arranged for providing the sense magnetization (211) with a magnetic anisotropy along a second direction (61) that is substantially perpendicular to the first direction (60) such that the sense magnetization (211) is adjusted about the second direction (61); the aligning device (20, 5, 52) being further arranged such that, when a first read magnetic field (44) is provided, a resistance variation range (VR) of the magnetic tunnel junction (2) is at least about 20% of the magnetoresistance (MR). The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption. |
