| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Cu-Ga alloy sputtering target in which the Cu-Ga alloy sputtering target with high density can be obtained by a normal pressure sintering method.SOLUTION: A Cu-Ga alloy sputtering target with high density is obtained through pressure molding and normal-pressure sintering using raw material powder. Here, the raw material powder is Cu-Ga alloy powder obtained by pulverizing Cu-Ga alloy powder which has its outer peripheral part made of a CuGaphase and/or a CuGa(γ, γ) phase and its center part made of a CuGa alloy phase having a lower Ga concentration than the outer peripheral part and/or a Cu phase as a solid solution of Ga and/or a pure Cu phase, and also has an average Ga concentration of 32-40 atom% to an average particle size (D50) of 10-45 μm, or Cu-Ga alloy powder which has its outer peripheral part made of a CuGaphase and/or a CuGa(γ, γ) phase and its center part made of a CuGa alloy phase having a lower Ga concentration than the outer peripheral part and/or a Cu phase as a solid solution of Ga and/or a pure Cu phase, and also has an average Ga concentration of 32-40 atom% and an average particle size (D50) of 10-45 μm. |
