| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same which can suppress a phase difference in potential of a gate electrode.SOLUTION: The compound semiconductor device comprises a substrate, an electron transit layer formed over the substrate, an electron supply layer formed over the electron transit layer, and a plurality of gate electrodes 5g formed over the electron supply layer, and a gate pad 8g to which the plurality of gate electrodes 5g are connected. A gate width of the gate electrode 5g becomes narrower with distance from the gate pad 8g. |
