发明名称 過昇温検出装置
摘要 PROBLEM TO BE SOLVED: To provide an excessive temperature rise detection device capable of suppressing the deterioration of the detecting accuracy of the excessive temperature rise detection of a semiconductor element.SOLUTION: An excessive temperature rise detection device is configured to detect the excessive temperature rise of a semiconductor element 10 disposed next to a drive circuit 20. The excessive temperature rise detection device includes: a first thermo-sensitive element 11 disposed in the semiconductor element 10 for outputting a first temperature signal via a wire 30 to the drive circuit 20; a second thermo-sensitive element 21 disposed in the drive circuit 20 for outputting a second temperature signal; a first comparator 24 for, when the first temperature signal reaches a reference voltage V1, outputting an excessive temperature rise sensing signal; a second comparator 25 for, when the second temperature signal reaches a reference voltage V2, outputting the excessive temperature rise sensing signal; a third comparator 26a for determining the superimposition of a noise on the wire 30; and a determination circuit 28 for, when the absence of the superimposition of a noise is determined, determining the excessive temperature rise of the semiconductor element 10 from the output of the first comparator 24, and for, when the presence of the superimposition of a noise is determined, determining the excessive temperature rise of the semiconductor element 10 from the output of the second comparator 25.
申请公布号 JP6028666(B2) 申请公布日期 2016.11.16
申请号 JP20130084348 申请日期 2013.04.12
申请人 株式会社デンソー 发明人 松田 憲二
分类号 H01L23/34;H01L21/822;H01L27/04 主分类号 H01L23/34
代理机构 代理人
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