| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resolution limit similar to that of a positive resist by forming a desired negative pattern by using a positive resist having a high resolution limit.SOLUTION: A method for manufacturing a photomask comprises: forming a first coating film pattern 100 in a space of a desired pattern on a light-shielding film 200 formed on a light-transmitting substrate 300, and then coating the upper surface thereof with a second coating film 110; and subsequently exposing the first coating film pattern by polishing the second coating film, and separating the first coating film pattern; and etching the light-shielding film by using the second coating film as a hard mask to form a desired pattern. |
