| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing silicon oxide more stably than the conventional technique at a lower cost.SOLUTION: The method for producing silicon oxide comprises the steps of; using an apparatus, which includes a reaction chamber for generating silicon oxide gas and a deposition chamber for depositing silicon oxide on the surface of a substrate; supplying silicon dioxide powder-containing mixed raw material powder to the reaction chamber of the apparatus; heating the supplied mixed raw material powder to generate silicon oxide gas; and depositing the generated silicon oxide gas on the surface of the substrate, as the silicon oxide. The pressure of the reaction chamber is made higher than that of the deposition chamber and a pressure difference between the reaction chamber and the deposition chamber is kept within 20-1,000 Pa. |
