发明名称 半導体メモリ装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device that efficiently executes read processing of a slow speed and large capacity flash memory on the basis of an effective flag to be set for each one page unit of cache.SOLUTION: A semiconductor memory device according to an embodiment comprises: a CPU; a slow speed and large capacity flash memory; a cache memory storing a part of data stored in the flash memory; a host interface controlling the access of the cache memory; and control means. The control means has a flag register in which the CPU sets a flag indicating an effective bit when data from a host or data from the flash memory is written, and otherwise indicating a non-effective bit, and rewrites the content of the cache memory only in a sector in which the content of the flag register indicates the non-effective bit when data of each page is copied from the flash memory to the cache memory. Rewritten data in a plurality of pages of the cache memory after completing of the copy is written back to the flash memory.
申请公布号 JP6027479(B2) 申请公布日期 2016.11.16
申请号 JP20130071894 申请日期 2013.03.29
申请人 東芝プラットフォームソリューション株式会社 发明人 瀬川 清
分类号 G06F12/0802;G06F12/00;G06F12/02;G06F12/08;G06F12/12 主分类号 G06F12/0802
代理机构 代理人
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