发明名称 低電圧動作キャッシュメモリ
摘要 PROBLEM TO BE SOLVED: To provide a cache memory capable of reducing a working voltage of the whole cache memory.SOLUTION: The cache memory includes; a data storage structure including tags; and a plurality of cache ways including blocks of a plurality of memory cells. The block comprises: a memory cell including a pair of cross coupled inverters connected to a path continuing to each of a pair of bit lines each having an output arranged corresponding to a column of the memory cells, a pair of switch parts provided between the bit line and an output of the inverter, and a word line controlling conduction of the switch part; and a mode control line controlling the conduction of a mode control switch part provided between data holding nodes of the adjacent memory cells. The cache memory is further provided with a circuit allowing switching to a high reliability mode by coupling two memory cells for each block. When a failure of the block is detected, the detected block is switched to the high reliability mode to increase the operation margin of the failure block.
申请公布号 JP6024897(B2) 申请公布日期 2016.11.16
申请号 JP20120267445 申请日期 2012.12.06
申请人 国立大学法人神戸大学 发明人 吉本 雅彦;川口 博;奥村 俊介;中田 洋平;鄭 晋旭
分类号 G06F11/10;G06F12/08;G06F12/12 主分类号 G06F11/10
代理机构 代理人
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