| 摘要 |
[Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53° and 59° from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections. |
