| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit in which stable electric characteristics are given to a transistor using an oxide semiconductor film; and provide a semiconductor integrated circuit functioning as an element for composing a transistor which has achieved microfabrication.SOLUTION: A semiconductor device comprises: a first transistor including first wiring, second wiring, third wiring, fourth wiring, a first gate electrode, a first source electrode and a first drain electrode; and a second transistor including a second gate electrode, a second source electrode and a second drain electrode. The first transistor is provided on a substrate containing a semiconductor material. The second transistor is composed of a multilayer film including an oxide semiconductor film. The second source electrode and the second drain electrode are formed by etching by using a resist mask formed by electron beam exposure. |
