发明名称 POWER CONVERSION DEVICE
摘要 A gate voltage and a reference value are compared in a period in which the gate voltage of a semiconductor switching element is oscillated, alternately repeating a state in which the gate voltage is larger than the reference value and a state in which the gate voltage is smaller than the reference value is detected, and short circuit or non-short-circuit is determined. Therefore, short circuit of the semiconductor switching element is accurately detected.
申请公布号 EP2961047(A4) 申请公布日期 2016.11.16
申请号 EP20130875894 申请日期 2013.02.25
申请人 HITACHI, LTD. 发明人 OGAWA, KAZUTOSHI;ISHIKAWA, KATSUMI;HATANAKA, AYUMU;KAGEYAMA, HIROSHI;MASUDA, TORU
分类号 H02M1/00;H02H7/00;H02H7/12;H02M1/08;H03K17/0812 主分类号 H02M1/00
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