| 摘要 |
Depth of a termination p base region provided in a termination portion of an active region close to an edge termination structure portion is more than depth of a p-type base region provided inside the termination p base region. An n-type high-concentration region is provided from one main surface of the semiconductor substrate in the entire surface layer of one surface of a semiconductor substrate within a depth of 20 μm or less below the bottom of the termination p base region. Ratio of the impurity concentration n1 of the n-type high-concentration region (1c) to the impurity concentration n2 of an n− drift region satisfies 1.0<n1/n2≦̸5.0. Reverse leakage current when operation temperature of an element is high can be reduced and trade-off between on-state voltage and switching loss can be improved. Rising peak voltage of collector voltage when a semiconductor device is off is reduced. |
