| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride light emitting element which has contact characteristics equivalent with that of a nitride semiconductor light emitting element in the past without using a contact electrode formed by a material such as ITO and Ni.SOLUTION: A nitride semiconductor light emitting element 1 having a luminescent layer 33 between an n-type nitride semiconductor layer 35 and a p-type nitride semiconductor layer 31 comprises: a first contact layer 32 which comes into contact with the p-type semiconductor nitride semiconductor layer 31 and which is composed of a nitride semiconductor layer doped with Mg at a concentration higher than that of the p-type nitride semiconductor layer 31; and a second contact layer 34 which comes in contact with the first contact layer 32 and which is composed of AlGaInN(0≤X≤1, 0≤Y≤1, 0≤Z≤1, X+Y+Z=1) doped with Zn at a concentration lower than that of the first contact layer 32. |
