SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

主权项

1. A semiconductor structure, comprising:
a first substrate having a conductive pad; a second substrate having a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface, wherein the through via penetrates through the first surface and the second surface, and the conductive pad is aligned with the through via; a dam layer located between the first substrate and the second surface of the second substrate, wherein at least one portion of the dam layer protrudes toward the through via; a photoresist layer located on the first surface and the sidewall surface of the second substrate, the dam layer that protrudes toward the through via, and between the conductive pad and the dam layer that protrudes toward the through via; and a conductive layer located on the photoresist layer and the conductive pad.