Via Definition Scheme

摘要

A method includes defining a metal pattern layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer. A spacer layer is grown over the metal pattern layer and the first dielectric layer. A metal trench is formed with a metal width in the first dielectric layer. A via hole is formed with a via width in the second dielectric layer.

主权项

1. A method, comprising:
defining a conductive line pattern layer over a first dielectric layer, wherein the first dielectric layer is disposed over a second dielectric layer, and wherein an opening in the conductive line pattern layer exposes a first portion of the first dielectric layer, the first portion having a first width; forming spacers along sidewalls of the opening, wherein after forming the spacers a second portion of the first dielectric layer is exposed, the second portion of the first dielectric layer having a second width; etching the second portion of the first dielectric layer using the spacers as a mask to expose a portion of the second dielectric layer; removing the spacers after etching the second portion of the first dielectric layer, the removing exposing third portions of the first dielectric layer; etching the third portions of the first dielectric layer to form a trench in the first dielectric layer, the trench having the first width; and etching the portion of the second dielectric layer to form a via hole in the second dielectric layer, the via hole having the second width.