| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
| 摘要 |
A semiconductor memory device includes memory cells coupled to a word line; and a peripheral circuit configured to read first to kth page data from the memory cells by sequentially applying first to kth test voltages to the word line, where k is a natural number greater than 3, wherein the peripheral circuit is configured to gradually reduce times during which the first to kth test voltages are applied to the word line. |
| 申请公布号 |
US2016329105(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615211779 |
申请日期 |
2016.07.15 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Tae Hoon |
| 分类号 |
G11C16/26;G11C16/24;G11C29/50 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
memory cells coupled to a word line; and a peripheral circuit configured to read first to kth page data from the memory cells by sequentially applying first to kth test voltages to the word line, where k is a natural number greater than 3, wherein the peripheral circuit is configured to gradually reduce times during which the first to kth test voltages are applied to the word line. |
| 地址 |
Gyeonggi-do KR |
