| 发明名称 |
DIFFERENT RADIATION MEASURING SENSOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
Disclosed herein is a different radiation measuring sensor and a manufacturing method thereof. The different radiation measuring sensor includes a semiconductor substrate, at least one bottom electrode formed on a bottom surface of the semiconductor, a plurality of top electrodes formed on a top surface of the semiconductor and electrically connected to the bottom electrode, and sensing films formed on the plurality of top electrodes and reacting with different materials. |
| 申请公布号 |
US2016327656(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615148680 |
申请日期 |
2016.05.06 |
| 申请人 |
KOREA ATOMIC ENERGY RESEARCH INSTITUTE |
发明人 |
Kim Han Soo;Ha Jang Ho;Jeong Manhee;Kim Young Soo |
| 分类号 |
G01T1/24 |
主分类号 |
G01T1/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A different radiation measuring sensor, comprising:
a semiconductor substrate; at least one bottom electrode formed on a bottom surface of the semiconductor substrate; a plurality of top electrodes formed on a top surface of the semiconductor substrate and electrically connected to the at least one bottom electrode; and sensing films formed on the plurality of top electrodes and reacting with different materials. |
| 地址 |
Daejeon KR |
