| 摘要 |
PROBLEM TO BE SOLVED: To provide an abnormality sign detection system and manufacturing method for a semiconductor device that are capable of detecting a sign of occurrence of abnormality of an apparatus.SOLUTION: A collection unit 111 collects a plurality of types of parameters on an apparatus's state in time series. A calculation unit 131 calculating a contribution ratio of each of the plurality of types of parameters to a transition from a first state to a second state while temporally changing a boundary between a first period and a second period in a time-series variation characteristic of each of the plurality of types of parameters. An extraction unit 132, on the basis of a result of the calculation by the calculation unit, extracts a parameter of the plurality of types of parameters that shows its contribution ratio's variation having a maximum value at timing before timing of abnormality occurrence of the apparatus with respect to boundary time. A creation unit 135 creates sign parameter information.SELECTED DRAWING: Figure 1 |
