| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a semiconductor device, and to reduce an area of a drive circuit of a semiconductor device having a memory cell.SOLUTION: A semiconductor device comprises: an element formation layer having at least a first semiconductor element; first wiring provided on the element formation layer; an interlayer film provided on the first wiring; and second wiring superposed with the first wiring via the interlayer film. The first wiring, the interlayer film, and the second wiring configure a second semiconductor element. The first wiring and the second wiring are supplied with the same potential.SELECTED DRAWING: Figure 1 |
