| 摘要 |
A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate. |
