| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of inhibiting accumulation of a reaction product or a resolvent on a nozzle inner wall and scattering of a foreign material in a processing chamber.SOLUTION: A substrate processing apparatus comprises: a processing chamber 201 for storing a plurality of substrates in a laminated manner; a heating unit 207 for heating the inside of the processing chamber; a material gas supply unit which supplies a material gas and has a plurality of material gas nozzles 233a having lengths different from each other, for supplying the material gas to the inside of the processing chamber so as not to be decomposed even when a temperature in the processing chamber is higher than a decomposition temperature of the material gas; a reaction gas supply unit which is arranged in the processing chamber and has a reaction gas nozzle 233b for supplying a reaction gas to the inside of the processing chamber; and a control part for performing a cycle predetermined times, which includes heating processing, processing for supplying the material gas and processing for supplying the reaction gas, by controlling the heating unit, the material gas supply unit and the reaction gas supply unit to form a film on the substrate. |
