| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce processes necessary for formation of a TSV.SOLUTION: A semiconductor device manufacturing method comprises: a ZrBO film formation process of forming a ZrBO film 64 on a surface of an upper side silicon substrate 63 having a through hole H extending in a thickness direction of the upper side silicon substrate 63, and on an inner surface of the through hole H; and an etching process of dry etching the ZrBO film 64 formed on a bottom face of the through hole H. In the ZrBO film formation process, Zr(BH)-containing gas and activated oxygen-containing gas are supplied to the heated upper side silicon substrate 63, the Zr(BH)-containing gas decomposed on the upper side silicon substrate 63 is oxidized by the oxygen-containing gas, and the ZrBO film 64 is formed on the upper side silicon substrate 63. Further, in the etching process, negative bias voltage is applied to the substrate S, and an etchant of the ZrBO film 64 is drawn to the surface of the upper side silicon substrate 63. |
