发明名称 |
INCOHERENT TYPE-III MATERIALS FOR CHARGE CARRIERS CONTROL DEVICES |
摘要 |
A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material. |
申请公布号 |
EP2962331(A4) |
申请公布日期 |
2016.11.09 |
申请号 |
EP20140756491 |
申请日期 |
2014.02.27 |
申请人 |
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE;GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC. |
发明人 |
TSU, RAPHAEL;DIETZ, NIKOLAUS;FERGUSON, IAN |
分类号 |
H01L43/06;C23C16/30;H01L21/205;H01L29/06;H01L29/15;H01L29/20;H01L29/205;H01L29/267;H01L31/0304;H01L31/0352;H03K3/011 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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