| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photoelectric conversion device which practices a technology for an isolation groove which enables simple formation at low temperature and with low damage, and practices a passivation technology for a lateral face.SOLUTION: A photoelectric conversion device of a present embodiment comprises: an isolation region made by a passivation film composed of an aluminum oxide layer 19 filled in isolation grooves 15 which reach from a top face of n-type amorphous silicon layer 12 and a top face of a p-type amorphous silicon layer to a p-type single crystal silicon substrate 11; a photoelectric conversion part in which an n-type amorphous silicon layer 12 of a second conductivity type silicon region is formed on a first surface 11a (light-receiving surface side) of a p-type single crystal silicon substrate 11 of a first conductivity type crystal-based silicon substrate and pn junction is formed; and a high-concentration p-type amorphous silicon layer 13 of a first conductivity type silicon region on a second surface 11b of the p-type single crystal silicon substrate 11 thereby to produce a BSF effect and constitute a contact layer for extracting substrate potential. |
