| 摘要 |
PROBLEM TO BE SOLVED: To simplify a composition for shielding short-wavelength light which is incident on an oxide semiconductor layer and simplify a process required for manufacturing of the composition.SOLUTION: A thin film transistor using an oxide semiconductor as a channel comprises: a light-shielding layer 11 which is formed on a part of a transparent substrate 10 and composed of a Fabry-Perot interference filter; an oxide semiconductor layer 12 formed on the light-shielding layer 11; and a transistor structure formed in the oxide semiconductor layer 12. |
