发明名称 SrRuO3膜の成膜方法
摘要 The present invention provides a SrRuO3 film manufacturing method capable of depositing high-quality SrRuO3 film while achieving a high deposition rate and preventing occurrence of abnormal discharge in the process of depositing the SrRuO3 film by DC magnetron sputtering. An embodiment of the present invention is a SrRuO3 film deposition method by offset rotary deposition-type DC magnetron sputtering, which includes depositing SrRuO3 film on a substrate at a deposition pressure of 1.0 Pa or more and less than 8.0 Pa in an oxygen-containing atmosphere.
申请公布号 JP6023722(B2) 申请公布日期 2016.11.09
申请号 JP20130550108 申请日期 2012.12.17
申请人 キヤノンアネルバ株式会社 发明人 醍醐 佳明;石橋 啓次
分类号 C23C14/34;C23C14/06;H01L21/28;H01L21/285 主分类号 C23C14/34
代理机构 代理人
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