| 摘要 |
Disclosed are a method and an appartus for determining acceptance/rejection of fine diameter wire bonding of semiconductor devices, LED devices, and the like at a high accuracy without contact, said acceptance/rejection having not been determined by conventional image inspecting methods and the like. The appartus is configured of a heating laser device (1) which spot-heats the bonding portion of the fine diameter wire; a two-wavelength infrared radiation thermometer (2), which corrects an emissivity and measures a temperature at a high speed on the basis of a minute amount of infrared rays radiated from the heated portion of the fine diameter wire; and a correcting/determining means (4), which corrects the measurement results obtained from the two-wavelenght infrared radiation thermometer (2) to a temperature change with reference heating power, then determines acceptance/rejection of the bonding by comparing the corrected temperature change or a value correlated to a bonding area obtained on the basis of the corrected temperature change with a temperature change indicated by an acceptable reference product having the temperature change corrected with the reference heating power or a value correlated to a bonding area obtained on the basis of the temperature change indicated bye the acceptable reference product. |
