| 摘要 |
A method of manufacturing an enhanced device, comprising: preparing a substrate (1); depositing a nitride channel layer (4) on the substrate, a gate region, a source region and a drain region being defined on the nitride channel layer (4), at least one non-planar structure being formed in the gate region of the nitride channel layer (4); depositing a nitride barrier layer (5) on the nitride channel layer, at least one non-planar structure being formed in the nitride barrier layer; forming a gate electrode (7), a source electrode (8) and a drain electrode (9) on the nitride barrier layer (5). With this invention, it is not necessary to etch the nitride barrier layer (5), thereby avoiding performance deterioration due to damage to the active region, such as low current density or current collapse effect. Furthermore, it is not required to introduce Mg atoms to implement p-type nitrides, thereby avoiding contamination of the MOCVD or MBE chamber. |
