SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

First and second ranges (RA, RB) of a silicon carbide film (90) have an interface (IF). The first range (RA) includes: a first breakdown voltage holding layer (81 A) having a first conductivity type; and an outer edge embedded region (TB) provided at an interface (IF) in the outer edge portion (PT) and having a second conductivity type. The second range (RB) includes a second breakdown voltage holding layer (81B) having the first conductivity type. A semiconductor element (EL) is formed in the second range (RB). The first range (RA) includes: a central section (CC) facing the semiconductor element (EL) in the central portion (PC) in a thickness direction; and an outer edge section (CT) facing the semiconductor element (EL) in the outer edge portion (PT) in the thickness direction. At the interface (IF), the outer edge section (CT) includes a portion having an impurity concentration different from the impurity concentration of the central section (CC).