| 摘要 |
PROBLEM TO BE SOLVED: To achieve a highly-reliable compound semiconductor device which successfully satisfies both of low on-state voltage and high off-state withstanding voltage with a simple composition and improves a device property without causing degradation in Schottky characteristics and decrease in yield of the device.SOLUTION: A compound semiconductor device comprises: a compound semiconductor lamination structure 2 including a GaN layer 2c, and an InAlN layer 2e which is formed above the GaN layer 2c and has a first region 2eand a second region 2e; and an anode electrode 5 formed on the InAlN layer 2e. The first region 2ehas an In composition rate lower than that of the second region 2e. The anode electrode 5 forms first Schottky junction SK1 with the first region 2eat an end and forms second Schottky junction SK2 with the second region 2eat a part other than the end. |
