| 摘要 |
PROBLEM TO BE SOLVED: To perform effective cleaning or rinse cleaning while suppressing Ge oxidation and dissolution, and the surface roughness due to the dissolution in a step for cleaning and rinsing a Ge substrate.SOLUTION: Ge oxidation and dissolution during cleaning are suppressed by cleaning a Ge substrate using water removing DO and hydrogen peroxide. Cleaning water may be gas dissolved water obtained by dissolving non-oxidation gas such as hydrogen gas and nitrogen gas and may furthermore include a chemical agent added thereto. Cleaning may be performed by ultrasonic cleaning, high pressure jet cleaning or two-fluid cleaning. |
