发明名称 |
CARBON DOPING SEMICONDUCTOR DEVICES |
摘要 |
A method of fabricating a semiconductor device can include forming a III-N semiconductor layer in a reactor and injecting a hydrocarbon precursor into the reactor, thereby carbon doping the III-N semiconductor layer and causing the III-N semiconductor layer to be insulating or semi-insulating. A semiconductor device can include a substrate and a carbon doped insulating or semi-insulating III-N semiconductor layer on the substrate. The carbon doping density in the III-N semiconductor layer is greater than 5×1018 cm−3 and the dislocation density in the III-N semiconductor layer is less than 2×109 cm−2. |
申请公布号 |
EP2973716(A4) |
申请公布日期 |
2016.11.02 |
申请号 |
EP20140770712 |
申请日期 |
2014.03.14 |
申请人 |
TRANSPHORM INC. |
发明人 |
KELLER, STACIA;SWENSON, BRIAN L.;FICHTENBAUM, NICHOLAS |
分类号 |
H01L29/16;H01L21/02;H01L21/18;H01L21/205;H01L29/10;H01L29/20;H01L29/205;H01L29/207;H01L29/32;H01L29/66;H01L29/778;H01L29/872 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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