Electronic Device including Shallow Trench Isolation (STI) Regions with Bottom Oxide Linear and Upper Nitride Liner and Related Methods

摘要

An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overflying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion af the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.