| 摘要 |
PROBLEM TO BE SOLVED: To suppress that a heterogeneous epitaxial layer is formed on an end surface of a semiconductor substrate, and that impurities gasifies from a foundation substrate of a first semiconductor layer and diffuses in a device.SOLUTION: While forming a trench 12 so as not to expose an ntype layer 2 by forming an oxide film 5 on an end surface of a semiconductor substrate 3, a ptype layer 13 is formed so as to bury the trench 12. Thereby, formation of a heterogeneous epitaxial layer on the end surface of the semiconductor substrate 3, and gasification of impurities from a foundation ntype silicon substrate 1 of the ntype layer 2 as a first semiconductor layer and diffusion of the impurities in a device, can be suppressed. |
