发明名称 |
BUILT-IN BYPASS DIODE |
摘要 |
A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions. |
申请公布号 |
EP3084839(A1) |
申请公布日期 |
2016.10.26 |
申请号 |
EP20140872115 |
申请日期 |
2014.12.12 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
SMITH, DAVID D.;RIM, SEUNG BUM |
分类号 |
H01L27/142;H01L31/044;H01L31/0443 |
主分类号 |
H01L27/142 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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