发明名称 BUILT-IN BYPASS DIODE
摘要 A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
申请公布号 EP3084839(A1) 申请公布日期 2016.10.26
申请号 EP20140872115 申请日期 2014.12.12
申请人 SUNPOWER CORPORATION 发明人 SMITH, DAVID D.;RIM, SEUNG BUM
分类号 H01L27/142;H01L31/044;H01L31/0443 主分类号 H01L27/142
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