发明名称 METHOD FOR HOTSPOT DETECTION AND RANKING OF A LITHOGRAPHIC MASK
摘要 The invention is related to a method for detecting and ranking hotspots in a lithographic mask used for printing a pattern on a substrate. According to preferred embodiments, the ranking is based on defect detection on a modulated focus wafer or a modulated dose wafer, wherein the actual de-focus or dose value at the defect locations is taken into account, in addition to the de-focus or dose setting applied to the lithographic tool when a mask pattern is printed on the wafer. Instead of the de-focus or dose, other lithographic parameters can be used as a basis for the ranking method.
申请公布号 EP3086175(A1) 申请公布日期 2016.10.26
申请号 EP20150164693 申请日期 2015.04.22
申请人 IMEC VZW 发明人 HALDER, SANDIP;VAN DEN HEUVEL, DIETER;TRUFFERT, VINCENT;LERAY, PHILIPPE
分类号 G03F1/84;G03F7/20 主分类号 G03F1/84
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