スピン注入磁化反転素子および磁気抵抗ランダムアクセスメモリ

摘要

PROBLEM TO BE SOLVED: To provide a spin injection magnetization reversal element capable of freely reversing magnetization to both directions of parallel and antiparallel in cell unit and miniaturizing a memory cell of a magnetoresistive random access memory.SOLUTION: A spin injection magnetization reversal element 1 is provided with a magnetization fixed layer 11 and a magnetization free layer 13 provided with a ferrimagnetic material laminated by sandwiching an intermediate layer 12, wherein by changing a current amount so as to be supplied in one direction, a magnetization direction of the magnetization free layer 13 is changed according to the current amount. This kind of spin injection magnetization reversal element 1 can be made to be a memory cell with a diode 2 being as an element for selecting an element.